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| IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 VDSS ID25 RDS(on) PDC V V V V S DD G = G SSG 50 A = D 50 B = 50 = = = 500 V 19 A 0.37 350 W Maximum Ratings 500 500 20 30 19 95 19 TBD 5 >200 350 A A A mJ V/ns V/ns W W W C/W C/W PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Characteristic Values min. 500 4.6 100 TJ = 25C TJ Tc = 25C, Derate 4.4W/C above 25C Tc = 25C TBD 3.0 TBD TBD Features (TJ = 25C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250 VGS = 20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 =125C typ. max. V V nA A mA S +175 C C + 175 C C g * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials 50 1 0.37 6.7 -55 175 -55 300 3.5 VGS = 20 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 50 V, ID = 0.5ID25, pulse test Advantages * Optimized for RF and high speed * Easy to mount--no insulators needed * High power density IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = Is, VGS=0 V, Pulse test, t 300 s, duty cycle 2% VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 IG = 3mA VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz typ. max. 1 pF pF pF pF ns ns ns ns nC nC nC 2020 172 21 33 4 4 4 5 42 14 21 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 19 114 1.5 200 A V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,731,002 5,017,508 5,486,715 6,727,585 IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET Fig. 1 Gate Charge vs. Gate-to-Source Voltage V DS = 250V, ID = 9.5A, IG = 3m A 16 Fig. 2 Typical Output Characteristics 30 8V - 15V Gate-to-Source Voltage (V) 14 12 10 8 6 4 2 0 0 20 40 60 80 ID , Drain Currnet (A) 25 20 15 7V 7.5V 10 5 0 0 20 40 60 80 100 120 6.5V 6V Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics V DS = 50V 60 Fig. 4 Extended Typical Output Characteristics Top 50 80 ID , Drain Current (A) 40 30 20 10 0 5 6 7 8 9 10 11 12 13 14 15 ID , Drain Currnet (A) 60 Bottom 12V - 15V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 40 20 0 0 20 40 60 80 100 120 VGS, Gate-to Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 VDS vs. Capacitance 10000 Ciss Capacitance (pF) 1000 Coss 100 Crss 10 1 0 50 100 150 200 250 300 350 400 VDS Voltage (V) IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET Fig. 6 Package Drawing 1 2 3 50: 1=G, 2=D, 3=S 50A: 1=G, 2=S, 3= D 50B: 1=D, 2=S, 3=G Doc #dsIXZR18N50_A/B REV 08/09 (c) 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com |
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